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H5N5006DL, H5N5006DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0397-0100 Rev.1.00 May 30, 2006
Features
* * * * * Low on-resistance: RDS(on) = 2.5 typ. Low leakage current: IDSS = 1 A max. (at VDS = 500 V) High speed switching: tf = 15 ns typ. (at VGS = 10 V, VDD 250 V, ID = 1.5 A) Low gate charge: Qg = 14 nC typ. (at VDD = 400 V, VGS = 10 V, ID = 3 A) Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
4 D 4 1. Gate 2. Drain 3. Source 4. Drain
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
G 1 2
3 S
1
2
3
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID (pulse) IDR IDR (pulse) Note1 IAPNote3 Pch Note2 ch-c Tch Tstg
Note1
Ratings 500 30 3 12 3 12 3 30 4.17 150 -55 to +150
Unit V V A A A A A W C/W C C
Rev.1.00, May 30, 2006, page 1 of 7
H5N5006DL, H5N5006DS
Electrical Characteristics
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 500 -- -- 3.0 1.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 2.5 2.5 365 35 8 20 12 48 15 14 2 8 0.85 270 0.8 Max -- 1 0.1 4.5 -- 3.0 -- -- -- -- -- -- -- -- -- -- 1.3 -- -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Test conditions ID = 10 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 1.5 A, VDS = 10 VNote4 ID = 1.5 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz VDD 250 V, ID = 1.5 A VGS = 10 V RL = 167 Rg = 10 VDD = 400 V VGS = 10 V ID = 3 A IF = 3 A, VGS = 0 Note4 IF = 3 A, VGS = 0 diF/dt = 100 A/s
Rev.1.00, May 30, 2006, page 2 of 7
H5N5006DL, H5N5006DS
Main Characteristics
Power vs. Temperature Derating
Pch (W)
40 50 20 10 5 2 1 0.5 0.2 0.1 0.05
10
m D = 10 s C (T O ms ( c pe 1s h = 25 rati ot) C on )
PW
Maximum Safe Operation Area
30
ID (A)
s
1
10 0 s
Channel Dissipation
20
Drain Current
10
0 0 50 100 150 200
0.02 0.01 Ta = 25C 0.005 0.1 0.3 1
Operation in this area is limited by RDS(on)
3
10 30 100 300 1000
Case Temperature
Tc (C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
5 Pulse Test 10 V 6V 3 8V 5
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
ID (A) Drain Current
4
4
3 5.5 V
Drain Current
2
2 Tc = 75C 25C 1 -25C 0
1
5V VGS = 4.5 V 0 4 8 12 16 20
0
0
2
4
6
8
10
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS(on) (V)
20 Pulse Test 16
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS(on) ()
10 5 Pulse Test
12 ID = 3 A 8 2A 4 1A
2 1
VGS = 10 V, 15 V
0.5
0.2 0.1 0.1
0 0 4 8 12 16 20
0.2
0.5
1
2
5
10
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.1.00, May 30, 2006, page 3 of 7
H5N5006DL, H5N5006DS
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
10 10 5 Tc = -25C 2 1 0.5 75C 25C Pulse Test VGS = 10 V
Static Drain to Source on State Resistance RDS(on) ()
Forward Transfer Admittance vs. Drain Current
8 ID = 3 A
6
4 1A
2A
2
0.2 0.1 0.1
VDS = 10 V Pulse Test 0.2 0.5 1 2 5 10
0 -40
0
40
80
120
160
Case Temperature
Tc (C)
Drain Current
ID (A)
Body-Drain Diode Reverse Recovery Time
1000 1000 500
Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
500
Ciss
Capacitance C (pF)
200 100 50 20 10 5 2 VGS = 0 f = 1 MHz 1 0 50 Crss Coss
200 100 50
20 10 0.1
di / dt = 100 A / s VGS = 0, Ta = 25C 0.2 0.5 1 2 5 10
100
150
200
250
Reverse Drain Current
IDR (A)
Drain to Source Voltage
VDS (V)
Dynamic Input Characteristics
VDS (V)
ID = 3 A VGS VDD = 100 V 250 V 400 V
VDS
Switching Characteristics
VGS (V)
20 1000 300 tf 100 30 10 tr 3 1 0.1 0.2 td(off) td(on) VGS = 10 V, VDD = 250 V PW = 5 s, duty 1 % RG = 10
1000
800
16
Drain to Source Voltage
600
12
400
8
200
0 0
VDD = 400 V 250 V 100 V 8 16 24 32 40
4
0
Gate to Source Voltage
Switching Time t (ns)
0.5
1
2
5
10
20
Gate Charge
Qg (nC)
Drain Current
ID (A)
Rev.1.00, May 30, 2006, page 4 of 7
H5N5006DL, H5N5006DS
Reverse Drain Current vs. Source to Drain Voltage
5
Gate to Source Cutoff Voltage VGS(off) (V)
Gate to Source Cutoff Voltage vs. Case Temperature
5 ID = 10 mA 4 1 mA 0.1 mA
IDR (A)
Pulse Test
4
Reverse Drain Current
3
3
2 5 V, 10 V
VGS = 0 V
2
1
1 VDS = 10 V 0 -50 0 50 100 150 200
0 0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage
VSD (V)
Case Temperature
Tc (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C D=1 0.5 0.3
1
0.2
0.1
0.1
0.05
ch - c (t) = s (t) * ch - c ch - c = 4.17C/W, Tc = 25C PDM PW T 1m 10 m 100 m 1 10
0.02
D=
PW T
0.03
0.01 lse t pu sho 1
0.01 10
100
Pulse Width
PW (S)
Switching Time Test Circuit
Waveform
Vin Monitor D.U.T. RL 10 Vin 10 V
Vout Monitor Vin Vout VDD = 250 V 10% 10%
90%
10%
90% td(on) tr
90% td(off) tf
Rev.1.00, May 30, 2006, page 5 of 7
H5N5006DL, H5N5006DS
Package Dimensions
* H5N5006DL
Package Name DPAK(L)-(2) JEITA Package Code RENESAS Code PRSS0004ZD-B Previous Code MASS[Typ.] DPAK(L)-(2) / DPAK(L)-(2)V 0.42g
Unit: mm
6.5 0.5 5.4 0.5
1.7 0.5
2.3 0.2 0.55 0.1
4.7 0.5
16.2 0.5
3.1 0.5
1.15 0.1 0.8 0.1 (0.7)
5.5 0.5
1.2 0.3
0.55 0.1 2.29 0.5 2.29 0.5
0.55 0.1
* H5N5006DS
Package Name DPAK(S) JEITA Package Code SC-63 RENESAS Code PRSS0004ZD-C Previous Code DPAK(S) / DPAK(S)V MASS[Typ.] 0.28g
Unit: mm
1.5 0.5
6.5 0.5 5.4 0.5
(0.1) (0.1)
2.3 0.2 0.55 0.1
(5.1)
5.5 0.5
1.2 Max
0 - 0.25
(1.2)
2.5 0.5
1.0 Max. 2.29 0.5
0.8 0.1 2.29 0.5
0.55 0.1
Rev.1.00, May 30, 2006, page 6 of 7
(5.1)
H5N5006DL, H5N5006DS
Ordering Information
Part Name H5N5006DL-E H5N5006DSTL-E Quantity 3200 pcs 3000 pcs Box (Sack) Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.1.00, May 30, 2006, page 7 of 7
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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(c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0

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